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| PD -91709 IRF7343 HEXFET(R) Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 3 4 6 5 P -C H A N N E L M O S F E T Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. RDS(on) 0.050 0.105 T op V iew S O -8 Absolute Maximum Ratings Max. Parameter V DS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range N-Channel 55 4.7 3.8 38 2.0 1.3 72 4.7 0.20 20 5.0 -55 to + 150 -5.0 114 -3.4 P-Channel -55 -3.4 -2.7 -27 Units V A W W mJ A mJ V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 62.5 Units C/W www.irf.com 1 2/24/99 IRF7343 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 55 -55 -- -- -- -- -- -- 1.0 -1.0 7.9 3.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. -- -- -- -- 0.059 -- 0.054 -- 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 -- -- -- -- -- -- -- -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.8 10 15 32 48 43 64 13 20 22 32 740 -- 690 -- 190 -- 210 -- 71 -- 86 -- Units V V/C Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 4.7A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 10V, ID = 4.5A VDS = -10V, ID = -3.1A VDS = 55V, VGS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, T J = 55C VDS = -55V, VGS = 0V, TJ = 55C VGS = 20V N-Channel ID = 4.5A, VDS = 44V, VGS = 10V nC P-Channel ID = -3.1A, V DS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0, RD = 16 ns P-Channel VDD = -28V, ID = -1.0A, RG = 6.0, RD = 16 N-Channel VGS = 0V, V DS = 25V, = 1.0MHz pF P-Channel VGS = 0V, V DS = -25V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V S IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance A nA Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 0.70 -0.80 60 54 120 85 Max. Units Conditions 2.0 -2.0 A 38 -27 1.2 TJ = 25C, IS = 2.0A, VGS = 0V V -1.2 TJ = 25C, IS = -2.0A, VGS = 0V 90 N-Channel ns 80 TJ = 25C, I F =2.0A, di/dt = 100A/s 170 nC P-Channel TJ = 25C, I F = -2.0A, di/dt = 100A/s 130 Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) N-Channel ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C Surface mounted on FR-4 board, t 10sec. P-Channel ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. P-Channel Starting TJ = 25C, L = 20mH RG = 25, IAS = -3.4A. 2 www.irf.com N-Channel IRF7343 VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V TOP 100 10 3.0V 3.0V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 1 20s PULSE WIDTH TJ = 150 C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 ISD , Reverse Drain Current (A) 10 TJ = 150 C TJ = 25 C 1 1 3 4 V DS = 25V 20s PULSE WIDTH 5 6 0.1 0.2 0.5 0.8 V GS = 0 V 1.1 1.4 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7343 2.5 N-Channel ID = 4.7A RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 R DS (on), Drain-to-Source On Resistance () 0.120 0.100 1.5 0.080 1.0 VGS = 4.5V 0.060 0.5 VGS = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.040 0 10 20 30 40 TJ , Junction Temperature ( C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.12 200 RDS(on) , Drain-to-Source On Resistance ( ) EAS , Single Pulse Avalanche Energy (mJ) TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 0.10 120 0.08 80 I D = 4.7A 0.06 40 0.04 0 2 4 6 8 10 A 0 25 50 75 100 125 150 V G S , Gate-to-Source V oltage (V ) Starting TJ , Junction Temperature ( C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com N-Channel IRF7343 20 1200 1000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance (pF) 800 Ciss 12 600 8 400 Coss 200 4 Crss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7343 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP P-Channel 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP 10 10 -3.0V 1 -3.0V 1 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) TJ = 25 C TJ = 150 C 10 10 TJ = 150 C TJ = 25 C 1 1 3 4 5 V DS = -25V 20s PULSE WIDTH 6 7 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage 6 www.irf.com P-Channel IRF7343 2.0 1.5 R DS (on), Drain-to-Source On Resistance () ID = -3.4 A 0.240 R DS(on) , Drain-to-Source On Resistance (Normalized) 0.200 VGS = -4.5V 0.160 1.0 0.5 0.120 VGS = -10V 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.080 0 2 4 6 8 10 12 TJ , Junction Temperature ( C) -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current 0.45 RDS(on) , Drain-to-Source On Resistance ( ) 300 EAS , Single Pulse Avalanche Energy (mJ) 250 ID -1.5A -2.7A BOTTOM -3.4A TOP 0.35 200 0.25 150 I D = -3.4 A 0.15 100 50 0.05 2 5 8 11 14 A 0 25 50 75 100 125 150 -V G S , G ate-to-S ource V oltage (V) Starting TJ , Junction Temperature ( C) Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current www.irf.com 7 IRF7343 1200 P-Channel 960 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -3.1A 16 VDS = -48V VDS = -30V VDS = -12V C, Capacitance (pF) 720 Ciss 12 480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40 --VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7343 Package Outline SO8 Outline D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) 6 -CB 8X 0.25 (.010) NOTES: A1 M CASBS L 8X C 8X RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO8 EXAM PLE : TH IS IS AN IR F7 101 D ATE C O DE (YW W ) Y = LAST D IGIT O F TH E YEAR W W = W EEK XXXX W AFER LO T C O D E (LAST 4 D IG ITS) 31 2 IN TER N ATIO N AL R EC TIF IER LO G O F710 1 TOP PAR T N UM BER BO TTO M www.irf.com 9 IRF7343 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. 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